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| (R) BD707/709/711 BD708/712 COMPLEMENTARY SILICON POWER TRANSISTORS s COMPLEMENTARY PNP - NPN DEVICES APPLICATION s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BD707, BD709 and BD711 are silicon Epitaxial-Base NPN power transistors in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The BD707 and BD711 complementary PNP types are BD708 and BD712 respectively. 1 2 3 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO VCER V CEO VEBO IC ICM IB P tot Ts tg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current T otal Dissipation at Tc 25 o C Storage Temperature Max. Operating Junction Temperature BD707 BD708 60 60 60 Value BD709 80 80 80 5 12 18 5 75 -65 to 150 150 Un it BD711 BD712 100 100 100 V V V V A A A W o C o C For PNP types voltage and current values are negative September 1999 1/6 BD707/708/709/711/712 THERMAL DATA R thj -case R thj -case Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.67 70 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l I CBO Parameter Collector Cut-off Current (IE = 0) Test Con ditions for BD707/708 for BD709 for BD711/712 T case = 150 oC for BD707/708 for BD709 for BD711/712 for BD707/708 for BD709 for BD711/712 V EB = 5 V I C = 100 mA for BD707/708 for BD709 for BD711/712 IC = 4 A IC = 3 A IC = 4 A I C = 0.5 A IC = 2 A I B = 0.4 A I B = ** V CE = 4 V V CE = 2 V V CE = 2 V for BD707/708 for BD709 V CE = 4 V V CE = 4 V for BD707/708 for BD709 for BD711/712 VCE = 3 V 40 30 30 15 5 10 8 8 MHz 120 V CB = 60 V V CB = 80 V V CB = 100 V V CB = 60 V V CB = 80 V V CB = 100 V V CE = 30 V V CE = 40 V V CE = 50 V Min. T yp. Max. 100 100 100 1 1 1 100 100 100 1 Unit A A A mA mA mA mA mA mA mA I CEO Collector Cut-off Current (IB = 0) Emitter Cut-off Current (I C = 0) IEBO V CEO(s us) Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) V CEK V BE h F E Collector-Emitter Saturation Voltage Knee Voltage Base-Emitter Voltage DC Current Gain 60 80 100 1 0.4 1.5 400 V V V V V V IC = 4 A I C = 10 A 150 fT Transition frequency I C = 300 mA 3 Pulsed: Pulse duration = 300 s, duty cycle 1.5 % ** Value for which IC = 3.3 A at VCE = 2V. For PNP types voltage and current values are negative. 2/6 BD707/708/709/711/712 Safe Operating Areas Derating Curve DC Current Gain(NPN type) DC Current Gain(PNP type) DC Transconductance(NPNtype) DC Transconductance(PNPtype) 3/6 BD707/708/709/711/712 Collector-Emitter Saturation Voltage (NPN type) Collector-Emitter Saturation Voltage (PNP type) Base-Emitter Saturation Voltage (NPN type) Base-Emitter Saturation Voltage (PNP type) Transition Frequency (NPN type) Transition Frequency (PNP type) 4/6 BD707/708/709/711/712 TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 P011C 5/6 BD707/708/709/711/712 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com . 6/6 |
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